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Discrete Semiconductor Products

JAN2N5415UA

Active
Microchip Technology

200 V POWER BJT UA ROHS COMPLIANT: YES

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Search across all available documentation for this part.

Discrete Semiconductor Products

JAN2N5415UA

Active
Microchip Technology

200 V POWER BJT UA ROHS COMPLIANT: YES

Deep-Dive with AI

Technical Specifications

Parameters and characteristics for this part

SpecificationJAN2N5415UA
Current - Collector (Ic) (Max) [Max]1 A
Current - Collector Cutoff (Max) [Max]50 µA
DC Current Gain (hFE) (Min) @ Ic, Vce30
GradeMilitary
Mounting TypeSurface Mount
Package / Case4-SMD, No Lead
Power - Max [Max]750 mW
QualificationMIL-PRF-19500/485
Supplier Device PackageUA
Transistor TypePNP
Vce Saturation (Max) @ Ib, Ic2 V
Voltage - Collector Emitter Breakdown (Max) [Max]200 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyBulk 50$ 184.04
Microchip DirectN/A 1$ 184.04
NewarkEach 1$ 184.04
100$ 170.90
500$ 164.33

Description

General part information

JAN2N5415UA-Transistor Series

This family of 2N5415 and 2N5416 epitaxial planar PNP transistors are military qualified up to a JANS level for high-reliability applications. These transistors are available in a TO-205AD (TO-39) and low profile surfacemount U4, U4 and UA packaging.

Documents

Technical documentation and resources