Discrete Semiconductor Products

UPS5817E3/TR13

Active

RECTIFIER DIODE, SCHOTTKY, 1 PHASE, 1 ELEMENT, 1A, 20V V(RRM), SILICON, DO-216AA

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Discrete Semiconductor Products

Active

RECTIFIER DIODE, SCHOTTKY, 1 PHASE, 1 ELEMENT, 1A, 20V V(RRM), SILICON, DO-216AA

Technical Specifications

Parameters and characteristics for this part

Specification	UPS5817E3/TR13

Current - Average Rectified (Io)	1 A
Current - Reverse Leakage @ Vr	1 mA
Mounting Type	Surface Mount
Operating Temperature - Junction [Max]	150 °C
Operating Temperature - Junction [Min]	-55 °C
Package / Case	DO-216AA
Speed	200 mA, 500 ns
Supplier Device Package	Powermite
Technology	Schottky
Voltage - DC Reverse (Vr) (Max) [Max]	20 V
Voltage - Forward (Vf) (Max) @ If	450 mV

Schotty Barrier Rectifier 2-Pin(1+Tab) 1.0A, 20V, VF=0.45V PowrMite T/R

Part	Speed	Voltage - DC Reverse (Vr) (Max) [Max]	Package / Case	Supplier Device Package	Current - Reverse Leakage @ Vr	Operating Temperature - Junction [Max]	Operating Temperature - Junction [Min]	Mounting Type	Technology	Current - Average Rectified (Io)	Voltage - Forward (Vf) (Max) @ If
Microchip Technology UPS5817E3/TR13	200 mA 500 ns	20 V	DO-216AA	Powermite	1 mA	150 °C	-55 °C	Surface Mount	Schottky	1 A	450 mV
Microchip Technology UPS5817/TR13	200 mA 500 ns	20 V	DO-216AA	Powermite	1 mA	150 °C	-55 °C	Surface Mount	Schottky	1 A	450 mV
Microchip Technology UPS5817E3/TR7	200 mA 500 ns	20 V	DO-216AA	Powermite 1 (DO216-AA)	1 mA	150 °C	-55 °C	Surface Mount	Schottky	1 A	450 mV

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

Ultra low forward voltage drop. High power surface mount package.

Technical documentation and resources