Discrete Semiconductor Products

SIJ482DP-T1-GE3

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MOSFET N-CH 80V 60A PPAK SO-8

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Discrete Semiconductor Products

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MOSFET N-CH 80V 60A PPAK SO-8

Technical Specifications

Parameters and characteristics for this part

Specification	SIJ482DP-T1-GE3

Current - Continuous Drain (Id) @ 25°C	60 A
Drain to Source Voltage (Vdss)	80 V
Drive Voltage (Max Rds On, Min Rds On)	10 V, 4.5 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	71 nC
Input Capacitance (Ciss) (Max) @ Vds	2425 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	PowerPAK® SO-8
Power Dissipation (Max)	69.4 W, 5 W
Rds On (Max) @ Id, Vgs	6.2 mOhm
Supplier Device Package	PowerPAK® SO-8
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	2.7 V

Part	Drive Voltage (Max Rds On, Min Rds On)	Mounting Type	Power Dissipation (Max)	Current - Continuous Drain (Id) @ 25°C	Drain to Source Voltage (Vdss)	Input Capacitance (Ciss) (Max) @ Vds	Gate Charge (Qg) (Max) @ Vgs [Max]	Operating Temperature [Min]	Operating Temperature [Max]	Vgs (Max)	Rds On (Max) @ Id, Vgs	Package / Case	Technology	Supplier Device Package	FET Type	Vgs(th) (Max) @ Id
Vishay General Semiconductor - Diodes Division SIJ482DP-T1-GE3	4.5 V 10 V	Surface Mount	5 W 69.4 W	60 A	80 V	2425 pF	71 nC	-55 °C	150 °C	20 V	6.2 mOhm	PowerPAK® SO-8	MOSFET (Metal Oxide)	PowerPAK® SO-8	N-Channel	2.7 V

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General part information

N-Channel 80 V 60A (Tc) 5W (Ta), 69.4W (Tc) Surface Mount PowerPAK® SO-8

Technical documentation and resources