SIJ482 Series
Manufacturer: Vishay General Semiconductor - Diodes Division
Beta
⌘K
MOSFET N-CH 80V 60A PPAK SO-8
| Part | Drive Voltage (Max Rds On, Min Rds On) | Mounting Type | Power Dissipation (Max) | Current - Continuous Drain (Id) @ 25°C | Drain to Source Voltage (Vdss) | Input Capacitance (Ciss) (Max) @ Vds | Gate Charge (Qg) (Max) @ Vgs [Max] | Operating Temperature [Min] | Operating Temperature [Max] | Vgs (Max) | Rds On (Max) @ Id, Vgs | Package / Case | Technology | Supplier Device Package | FET Type | Vgs(th) (Max) @ Id |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 Vishay General Semiconductor - Diodes Division | 4.5 V 10 V | Surface Mount | 5 W 69.4 W | 60 A | 80 V | 2425 pF | 71 nC | -55 °C | 150 °C | 20 V | 6.2 mOhm | PowerPAK® SO-8 | MOSFET (Metal Oxide) | PowerPAK® SO-8 | N-Channel | 2.7 V |