Discrete Semiconductor Products

SIS888DN-T1-GE3

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MOSFET N-CH 150V 20.2A PPAK

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Discrete Semiconductor Products

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MOSFET N-CH 150V 20.2A PPAK

Technical Specifications

Parameters and characteristics for this part

Specification	SIS888DN-T1-GE3

Current - Continuous Drain (Id) @ 25°C	20.2 A
Drain to Source Voltage (Vdss)	150 V
Drive Voltage (Max Rds On, Min Rds On) [Max]	7.5 V
Drive Voltage (Max Rds On, Min Rds On) [Min]	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	14.5 nC
Input Capacitance (Ciss) (Max) @ Vds	420 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	PowerPAK® 1212-8S
Power Dissipation (Max)	52 W
Rds On (Max) @ Id, Vgs [Max]	58 mOhm
Supplier Device Package	PowerPAK® 1212-8S
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V

Part	Gate Charge (Qg) (Max) @ Vgs	Package / Case	Input Capacitance (Ciss) (Max) @ Vds	Supplier Device Package	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On) [Min]	Drive Voltage (Max Rds On, Min Rds On) [Max]	Drain to Source Voltage (Vdss)	Rds On (Max) @ Id, Vgs [Max]	Power Dissipation (Max)	Mounting Type	Vgs (Max)	Operating Temperature [Min]	Operating Temperature [Max]	FET Type	Technology
Vishay General Semiconductor - Diodes Division SIS888DN-T1-GE3	14.5 nC	PowerPAK® 1212-8S	420 pF	PowerPAK® 1212-8S	20.2 A	10 V	7.5 V	150 V	58 mOhm	52 W	Surface Mount	20 V	-55 °C	150 °C	N-Channel	MOSFET (Metal Oxide)

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General part information

N-Channel 150 V 20.2A (Tc) 52W (Tc) Surface Mount PowerPAK® 1212-8S

Technical documentation and resources