SIS888 Series

Catalog

MOSFET N-CH 150V 20.2A PPAK

Part	Gate Charge (Qg) (Max) @ Vgs	Package / Case	Input Capacitance (Ciss) (Max) @ Vds	Supplier Device Package	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On) [Min]	Drive Voltage (Max Rds On, Min Rds On) [Max]	Drain to Source Voltage (Vdss)	Rds On (Max) @ Id, Vgs [Max]	Power Dissipation (Max)	Mounting Type	Vgs (Max)	Operating Temperature [Min]	Operating Temperature [Max]	FET Type	Technology
Vishay General Semiconductor - Diodes Division SIS888DN-T1-GE3	14.5 nC	PowerPAK® 1212-8S	420 pF	PowerPAK® 1212-8S	20.2 A	10 V	7.5 V	150 V	58 mOhm	52 W	Surface Mount	20 V	-55 °C	150 °C	N-Channel	MOSFET (Metal Oxide)