Specification	PMT280ENEAX

Current - Continuous Drain (Id) @ 25°C	1.5 A
Drain to Source Voltage (Vdss)	100 V
Drive Voltage (Max Rds On, Min Rds On)	10 V, 4.5 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	6.8 nC
Grade	Automotive
Input Capacitance (Ciss) (Max) @ Vds	195 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	TO-261AA, TO-261-4
Power Dissipation (Max)	770 mW
Qualification	AEC-Q101
Rds On (Max) @ Id, Vgs	385 mOhm
Supplier Device Package	SOT-223
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	2.7 V

PMT280 Series

100 V N-channel Trench MOSFET

Part	Grade	Vgs (Max)	Drive Voltage (Max Rds On, Min Rds On)	Technology	Rds On (Max) @ Id, Vgs	Mounting Type	Gate Charge (Qg) (Max) @ Vgs	Vgs(th) (Max) @ Id	Package / Case	Input Capacitance (Ciss) (Max) @ Vds	Supplier Device Package	Current - Continuous Drain (Id) @ 25°C	FET Type	Operating Temperature [Max]	Operating Temperature [Min]	Drain to Source Voltage (Vdss)	Power Dissipation (Max)	Qualification
Nexperia USA Inc. PMT280ENEAX	Automotive	20 V	4.5 V 10 V	MOSFET (Metal Oxide)	385 mOhm	Surface Mount	6.8 nC	2.7 V	TO-261-4 TO-261AA	195 pF	SOT-223	1.5 A	N-Channel	150 °C	-55 °C	100 V	770 mW	AEC-Q101

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Cut Tape (CT)	1	$ 0.40
		10	$ 0.34
		100	$ 0.24
		500	$ 0.18
	Digi-Reel®	1	$ 0.40
		10	$ 0.34
		100	$ 0.24
		500	$ 0.18
	N/A	1966	$ 0.81
	Tape & Reel (TR)	1000	$ 0.15
		2000	$ 0.13
		5000	$ 0.13
		10000	$ 0.12
		25000	$ 0.12

Description

General part information

PMT280 Series

N-channel enhancement mode Field-Effect Transistor (FET) in a medium power SOT223 (SC-73) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.