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100 V N-channel Trench MOSFET
Description
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N-channel enhancement mode Field-Effect Transistor (FET) in a medium power SOT223 (SC-73) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
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100 V N-channel Trench MOSFET
100 V N-channel Trench MOSFET
| Part | Grade | Vgs (Max) | Drive Voltage (Max Rds On, Min Rds On) | Technology | Rds On (Max) @ Id, Vgs | Mounting Type | Gate Charge (Qg) (Max) @ Vgs | Vgs(th) (Max) @ Id | Package / Case | Input Capacitance (Ciss) (Max) @ Vds | Supplier Device Package | Current - Continuous Drain (Id) @ 25°C | FET Type | Operating Temperature [Max] | Operating Temperature [Min] | Drain to Source Voltage (Vdss) | Power Dissipation (Max) | Qualification |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 Nexperia USA Inc. | Automotive | 20 V | 4.5 V 10 V | MOSFET (Metal Oxide) | 385 mOhm | Surface Mount | 6.8 nC | 2.7 V | TO-261-4 TO-261AA | 195 pF | SOT-223 | 1.5 A | N-Channel | 150 °C | -55 °C | 100 V | 770 mW | AEC-Q101 |