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TO-247-3
Discrete Semiconductor Products

FCH22N60N

Obsolete
ON Semiconductor

POWER MOSFET, N-CHANNEL, SUPREMOS<SUP>®</SUP>, FAST, 600 V, 22 A, 165 MΩ, TO-247

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TO-247-3
Discrete Semiconductor Products

FCH22N60N

Obsolete
ON Semiconductor

POWER MOSFET, N-CHANNEL, SUPREMOS<SUP>®</SUP>, FAST, 600 V, 22 A, 165 MΩ, TO-247

Technical Specifications

Parameters and characteristics for this part

SpecificationFCH22N60N
Current - Continuous Drain (Id) @ 25°C22 A
Drain to Source Voltage (Vdss)600 V
Drive Voltage (Max Rds On, Min Rds On)10 V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]45 nC
Input Capacitance (Ciss) (Max) @ Vds1950 pF
Mounting TypeThrough Hole
Operating Temperature [Max]150 °C
Operating Temperature [Min]-55 °C
Package / CaseTO-247-3
Power Dissipation (Max)205 W
Rds On (Max) @ Id, Vgs165 mOhm
Supplier Device PackageTO-247-3
TechnologyMOSFET (Metal Oxide)
Vgs (Max)30 V
Vgs(th) (Max) @ Id4 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
NewarkEach 60$ 6.04
120$ 5.74
270$ 5.19
510$ 4.65

Description

General part information

FCH22N60N Series

The SupreMOS®MOSFET is the next generation of high voltage super-junction (SJ) technology employing a deep trench filling process that differentiates it from the conventional SJ MOSFETs. This advanced technology and precise process control provides lowest Rsp on-resistance, superior switching performance and ruggedness. SupreMOS MOSFET is suitable for high frequency switching power converter applications such as PFC, server/telecom power, FPD TV power, ATX power and industrial power applications.