FCH22N60N Series

Power MOSFET, N-Channel, SUPREMOS®, FAST, 600 V, 22 A, 165 mΩ, TO-247

Catalog

Power MOSFET, N-Channel, SUPREMOS®, FAST, 600 V, 22 A, 165 mΩ, TO-247

Part	FET Type	Gate Charge (Qg) (Max) @ Vgs [Max]	Package / Case	Rds On (Max) @ Id, Vgs	Mounting Type	Supplier Device Package	Drive Voltage (Max Rds On, Min Rds On)	Vgs (Max)	Power Dissipation (Max)	Technology	Drain to Source Voltage (Vdss)	Vgs(th) (Max) @ Id	Current - Continuous Drain (Id) @ 25°C	Operating Temperature [Min]	Operating Temperature [Max]	Input Capacitance (Ciss) (Max) @ Vds
ON Semiconductor FCH22N60N	N-Channel	45 nC	TO-247-3	165 mOhm	Through Hole	TO-247-3	10 V	30 V	205 W	MOSFET (Metal Oxide)	600 V	4 V	22 A	-55 °C	150 °C	1950 pF

Catalog

Power MOSFET, N-Channel, SUPREMOS®, FAST, 600 V, 22 A, 165 mΩ, TO-247

Key Features

• BVDSS= 650V @ TJ= 150°C

• RDS(on)= 140mΩ ( Typ.) @ VGS= 10V, ID= 11A

• Ultra low gate charge ( Typ. Qg= 45nC )

• Low effective output capacitance ( Typ. Coss.eff = 196.4pF )

• 100% avalanche tested

• RoHS compliant

Description

The SupreMOS®MOSFET is the next generation of high voltage super-junction (SJ) technology employing a deep trench filling process that differentiates it from the conventional SJ MOSFETs. This advanced technology and precise process control provides lowest Rsp on-resistance, superior switching performance and ruggedness. SupreMOS MOSFET is suitable for high frequency switching power converter applications such as PFC, server/telecom power, FPD TV power, ATX power and industrial power applications.