Discrete Semiconductor Products
STE53NC50
ActiveSTMicroelectronics
BIPOLAR (BJT) SINGLE TRANSISTOR, N CHANNEL, 53 A, 500 V, 0.08 OHM, 10 V, 4 V
Discrete Semiconductor Products
STE53NC50
ActiveSTMicroelectronics
BIPOLAR (BJT) SINGLE TRANSISTOR, N CHANNEL, 53 A, 500 V, 0.08 OHM, 10 V, 4 V
Technical Specifications
Parameters and characteristics for this part
| Specification | STE53NC50 |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 53 A |
| Drain to Source Voltage (Vdss) | 500 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10 V |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 434 nC |
| Input Capacitance (Ciss) (Max) @ Vds | 11200 pF |
| Mounting Type | Chassis Mount |
| Operating Temperature | 150 °C |
| Package / Case | ISOTOP |
| Power Dissipation (Max) | 460 W |
| Rds On (Max) @ Id, Vgs | 80 mOhm |
| Supplier Device Package | ISOTOP® |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 30 V |
| Vgs(th) (Max) @ Id | 4 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
Description
General part information
STE53NC50 Series
The PowerMESHTMII is the evolution of the first generation of MESH OVERLAYTM. The layout refinements introduced greatly improve the Ron*area figure of merit while keeping the device at the leading edge for what concerns swithing speed, gate charge and ruggedness.
Documents
Technical documentation and resources