Discrete Semiconductor Products

STE53NC50

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STMicroelectronics

BIPOLAR (BJT) SINGLE TRANSISTOR, N CHANNEL, 53 A, 500 V, 0.08 OHM, 10 V, 4 V

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Search across all available documentation for this part.

Documents UM1575 +17

Discrete Semiconductor Products

STE53NC50

Active

STMicroelectronics

BIPOLAR (BJT) SINGLE TRANSISTOR, N CHANNEL, 53 A, 500 V, 0.08 OHM, 10 V, 4 V

Deep-Dive with AI

Documents UM1575 +17

Specifications Series Pricing Description Documents

Technical Specifications

Parameters and characteristics for this part

Specification	STE53NC50

Current - Continuous Drain (Id) @ 25°C	53 A
Drain to Source Voltage (Vdss)	500 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	434 nC
Input Capacitance (Ciss) (Max) @ Vds	11200 pF
Mounting Type	Chassis Mount
Operating Temperature	150 °C
Package / Case	ISOTOP, SOT-227-4, miniBLOC
Power Dissipation (Max) [Max]	460 W
Rds On (Max) @ Id, Vgs	80 mOhm
Supplier Device Package	ISOTOP®, ISOTOP
Technology	MOSFET (Metal Oxide)
Vgs (Max)	30 V
Vgs(th) (Max) @ Id	4 V

STE53 Series

Part	Supplier Device Package	Package / Case	FET Type	Drain to Source Voltage (Vdss)	Power Dissipation (Max) [Max]	Current - Continuous Drain (Id) @ 25°C	Vgs(th) (Max) @ Id	Operating Temperature	Technology	Mounting Type	Rds On (Max) @ Id, Vgs	Input Capacitance (Ciss) (Max) @ Vds	Gate Charge (Qg) (Max) @ Vgs [Max]	Vgs (Max)	Drive Voltage (Max Rds On, Min Rds On)
STMicroelectronics STE53NC50	ISOTOP ISOTOP®	ISOTOP SOT-227-4 miniBLOC	N-Channel	500 V	460 W	53 A	4 V	150 °C	MOSFET (Metal Oxide)	Chassis Mount	80 mOhm	11200 pF	434 nC	30 V	10 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	N/A	114	$ 41.83
	Tube	1	$ 41.37
		10	$ 36.87
		100	$ 32.36
Newark	Each	1	$ 41.76
		5	$ 36.34
		10	$ 30.91
		30	$ 30.86
		50	$ 30.82
		100	$ 28.60
		250	$ 28.21

Description

General part information

STE53 Series

The PowerMESHTMII is the evolution of the first generation of MESH OVERLAYTM. The layout refinements introduced greatly improve the Ron*area figure of merit while keeping the device at the leading edge for what concerns swithing speed, gate charge and ruggedness.TYPICAL RDS(on) = 0.07EXTREMELY HIGH dv/dt CAPABILITY100% AVALANCHE TESTEDNEW HIGH VOLTAGE BENCHMARKGATE CHARGE MINIMIZED