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TO-220F
Discrete Semiconductor Products

FCP9N60N-F102

Obsolete
ON Semiconductor

POWER MOSFET, N-CHANNEL, SUPREMOS<SUP>®</SUP>, FAST, 600 V, 9 A, 385 MΩ, TO-220

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TO-220F
Discrete Semiconductor Products

FCP9N60N-F102

Obsolete
ON Semiconductor

POWER MOSFET, N-CHANNEL, SUPREMOS<SUP>®</SUP>, FAST, 600 V, 9 A, 385 MΩ, TO-220

Technical Specifications

Parameters and characteristics for this part

SpecificationFCP9N60N-F102
Current - Continuous Drain (Id) @ 25°C9 A
Drain to Source Voltage (Vdss)600 V
Drive Voltage (Max Rds On, Min Rds On)10 V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs29 nC
Input Capacitance (Ciss) (Max) @ Vds1240 pF
Mounting TypeThrough Hole
Operating Temperature [Max]150 °C
Operating Temperature [Min]-55 °C
Package / CaseTO-220-3 Full Pack
Power Dissipation (Max) [Max]83.3 W
Rds On (Max) @ Id, Vgs385 mOhm
Supplier Device PackageTO-220F
TechnologyMOSFET (Metal Oxide)
Vgs (Max)30 V
Vgs(th) (Max) @ Id4 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

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Description

General part information

FCP9N60N Series

The SupreMOS®MOSFET is the next generation of high voltage super-junction (SJ) technology employing a deep trench filling process that differentiates it from the conventional SJ MOSFETs. This advanced technology and precise process control provides lowest Rsp on-resistance, superior switching performance and ruggedness. SupreMOS MOSFET is suitable for high frequency switching power converter applications such as PFC, server/telecom power, FPD TV power, ATX power and industrial power applications.