Discrete Semiconductor Products

DN3535N8-G

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MOSFET TRANSISTOR, N CHANNEL, 230 MA, 350 V, 10 OHM, 0 V ROHS COMPLIANT: YES

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Discrete Semiconductor Products

Active

MOSFET TRANSISTOR, N CHANNEL, 230 MA, 350 V, 10 OHM, 0 V ROHS COMPLIANT: YES

Technical Specifications

Parameters and characteristics for this part

Specification	DN3535N8-G

Current - Continuous Drain (Id) @ 25°C	230 mA
Drain to Source Voltage (Vdss)	350 V
Drive Voltage (Max Rds On, Min Rds On)	0 V
FET Feature	Depletion Mode
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds	360 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	TO-243AA
Rds On (Max) @ Id, Vgs	10 Ohm
Supplier Device Package	TO-243AA (SOT-89)
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V

Part	Mounting Type	Drive Voltage (Max Rds On, Min Rds On)	Supplier Device Package	Current - Continuous Drain (Id) @ 25°C	Rds On (Max) @ Id, Vgs	Operating Temperature [Min]	Operating Temperature [Max]	Package / Case	FET Type	Drain to Source Voltage (Vdss)	Technology	FET Feature	Vgs (Max)	Input Capacitance (Ciss) (Max) @ Vds
Microchip Technology DN3535N8-G	Surface Mount	0 V	TO-243AA (SOT-89)	230 mA	10 Ohm	-55 °C	150 °C	TO-243AA	N-Channel	350 V	MOSFET (Metal Oxide)	Depletion Mode	20 V	360 pF

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

High input impedance

Low input capacitance

Fast switching speeds

Technical documentation and resources