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8-Power TDFN
Discrete Semiconductor Products

CSD25402Q3A

Active
Texas Instruments

-20-V, P CHANNEL NEXFET™ POWER MOSFET, SINGLE SON 3 MM X 3 MM, 8.9 MOHM

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8-Power TDFN
Discrete Semiconductor Products

CSD25402Q3A

Active
Texas Instruments

-20-V, P CHANNEL NEXFET™ POWER MOSFET, SINGLE SON 3 MM X 3 MM, 8.9 MOHM

Technical Specifications

Parameters and characteristics for this part

SpecificationCSD25402Q3A
Current - Continuous Drain (Id) @ 25°C76 A
Drain to Source Voltage (Vdss)20 V
Drive Voltage (Max Rds On, Min Rds On)4.5 V, 1.8 V
FET TypeP-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]9.7 nC
Input Capacitance (Ciss) (Max) @ Vds1790 pF
Mounting TypeSurface Mount
Operating Temperature [Max]150 °C
Operating Temperature [Min]-55 °C
Package / Case8-PowerVDFN
Power Dissipation (Max)2.8 W, 69 W
Rds On (Max) @ Id, Vgs [Max]8.9 mOhm
Supplier Device Package8-VSONP (3x3.3)
TechnologyMOSFET (Metal Oxide)
Vgs (Max)12 V
Vgs(th) (Max) @ Id1.15 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyCut Tape (CT) 1$ 0.88
10$ 0.72
100$ 0.56
500$ 0.47
1000$ 0.39
Digi-Reel® 1$ 0.88
10$ 0.72
100$ 0.56
500$ 0.47
1000$ 0.39
Tape & Reel (TR) 2500$ 0.36
5000$ 0.35
12500$ 0.33
25000$ 0.33
Texas InstrumentsLARGE T&R 1$ 0.54
100$ 0.41
250$ 0.30
1000$ 0.22

Description

General part information

CSD25402Q3A Series

This -20-V, 7.7-mΩ NexFET power MOSFET is designed to minimize losses in power conversion load management applications with a SON 3.3 mm × 3.3 mm package that offers an excellent thermal performance for the size of the device.

This -20-V, 7.7-mΩ NexFET power MOSFET is designed to minimize losses in power conversion load management applications with a SON 3.3 mm × 3.3 mm package that offers an excellent thermal performance for the size of the device.