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Discrete Semiconductor Products

DMN22M5UFG-7

Active
Diodes Inc

MOSFET ENHANCEMENT N-CHANNEL 20V 8-PIN POWERDI3333 T/R

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Package Image for PowerDI3333-8
Discrete Semiconductor Products

DMN22M5UFG-7

Active
Diodes Inc

MOSFET ENHANCEMENT N-CHANNEL 20V 8-PIN POWERDI3333 T/R

Deep-Dive with AI

Technical Specifications

Parameters and characteristics for this part

SpecificationDMN22M5UFG-7
Drain to Source Voltage (Vdss)20 V
Drive Voltage (Max Rds On, Min Rds On)4.5 V, 2.5 V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs99 nC
GradeAutomotive
Input Capacitance (Ciss) (Max) @ Vds [Max]3926 pF
Mounting TypeSurface Mount
Operating Temperature [Max]150 °C
Operating Temperature [Min]-55 °C
Package / Case8-PowerVDFN
Power Dissipation (Max) [Max]600 mW
QualificationAEC-Q101
Rds On (Max) @ Id, Vgs2 mOhm
Supplier Device PackagePOWERDI3333-8
TechnologyMOSFET (Metal Oxide)
Vgs (Max)12 V
Vgs(th) (Max) @ Id1.3 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyCut Tape (CT) 1$ 0.81
10$ 0.70
100$ 0.49
500$ 0.41
1000$ 0.35
Digi-Reel® 1$ 0.81
10$ 0.70
100$ 0.49
500$ 0.41
1000$ 0.35
Tape & Reel (TR) 2000$ 0.29
4000$ 0.28

Description

General part information

DMN22M5UFG Series

This MOSFET is designed to minimize the on-state resistance (RDS(ON)) and yet maintain superior switching performance, making it ideal for high-efficiency power management applications.

Documents

Technical documentation and resources