DMN22M5UFG Series

20V N-Channel Enhancement Mode MOSFET

Catalog

20V N-Channel Enhancement Mode MOSFET

Part	Package / Case	Vgs(th) (Max) @ Id	Input Capacitance (Ciss) (Max) @ Vds [Max]	Rds On (Max) @ Id, Vgs	Operating Temperature [Min]	Operating Temperature [Max]	Vgs (Max)	Grade	Qualification	FET Type	Drain to Source Voltage (Vdss)	Mounting Type	Gate Charge (Qg) (Max) @ Vgs	Drive Voltage (Max Rds On, Min Rds On)	Technology	Power Dissipation (Max) [Max]	Supplier Device Package
Diodes Inc DMN22M5UFG-7	8-PowerVDFN	1.3 V	3926 pF	2 mOhm	-55 °C	150 °C	12 V	Automotive	AEC-Q101	N-Channel	20 V	Surface Mount	99 nC	2.5 V 4.5 V	MOSFET (Metal Oxide)	600 mW	POWERDI3333-8

Catalog

20V N-Channel Enhancement Mode MOSFET

Key Features

• Low RDS(ON) – Ensures On State Losses are Minimized

• Small Form Factor, Thermally Efficient Package Enables Higher Density End Products

• Occupies Just 33% of the Board Area Occupied by SO-8 Enabling Smaller End Product

• 100% Unclamped Inductive Switching (UIS) Test in Production – Ensures More Reliable and Robust End Application

• Lead-Free Finish; RoHS Compliant (Notes 1 & 2)

• Halogen and Antimony Free. "Green" Device (Note 3)

• For automotive applications requiring specific change control (i.e. parts qualified to AEC-Q101, PPAP capable, andmanufactured in IATF 16949 certified facilities), please contact us or your local Diodes representative.

• https://www.diodes.com/quality/product-definitions/

Description

This MOSFET is designed to minimize the on-state resistance (RDS(ON)) and yet maintain superior switching performance, making it ideal for high-efficiency power management applications.