Specification	FQU1N80TU

Current - Continuous Drain (Id) @ 25°C	1 A
Drain to Source Voltage (Vdss)	800 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	7.2 nC
Input Capacitance (Ciss) (Max) @ Vds	195 pF
Mounting Type	Through Hole
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	IPAK, TO-251-3 Short Leads, TO-251AA
Power Dissipation (Max)	2.5 W, 45 W
Rds On (Max) @ Id, Vgs	20 Ohm
Supplier Device Package	IPAK
Technology	MOSFET (Metal Oxide)
Vgs (Max)	30 V
Vgs(th) (Max) @ Id	5 V

FQU1N80 Series

Power MOSFET, N-Channel, QFET®, 800 V, 1.0 A, 20 Ω, IPAK

Part	Vgs (Max)	Technology	FET Type	Gate Charge (Qg) (Max) @ Vgs [Max]	Power Dissipation (Max)	Operating Temperature [Min]	Operating Temperature [Max]	Rds On (Max) @ Id, Vgs	Input Capacitance (Ciss) (Max) @ Vds	Vgs(th) (Max) @ Id	Drive Voltage (Max Rds On, Min Rds On)	Current - Continuous Drain (Id) @ 25°C	Mounting Type	Drain to Source Voltage (Vdss)	Package / Case	Supplier Device Package
ON Semiconductor FQU1N80TU	30 V	MOSFET (Metal Oxide)	N-Channel	7.2 nC	2.5 W 45 W	-55 °C	150 °C	20 Ohm	195 pF	5 V	10 V	1 A	Through Hole	800 V	IPAK TO-251-3 Short Leads TO-251AA	IPAK

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Description

General part information

FQU1N80 Series

This N-Channel enhancement mode power MOSFET is produced using ON Semiconductor Semiconductor's proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplied, active power factor correction (PFC), and electronic lamp balasts.