FQU1N80 Series

Power MOSFET, N-Channel, QFET®, 800 V, 1.0 A, 20 Ω, IPAK

Catalog

Power MOSFET, N-Channel, QFET®, 800 V, 1.0 A, 20 Ω, IPAK

Part	Vgs (Max)	Technology	FET Type	Gate Charge (Qg) (Max) @ Vgs [Max]	Power Dissipation (Max)	Operating Temperature [Min]	Operating Temperature [Max]	Rds On (Max) @ Id, Vgs	Input Capacitance (Ciss) (Max) @ Vds	Vgs(th) (Max) @ Id	Drive Voltage (Max Rds On, Min Rds On)	Current - Continuous Drain (Id) @ 25°C	Mounting Type	Drain to Source Voltage (Vdss)	Package / Case	Supplier Device Package
ON Semiconductor FQU1N80TU	30 V	MOSFET (Metal Oxide)	N-Channel	7.2 nC	2.5 W 45 W	-55 °C	150 °C	20 Ohm	195 pF	5 V	10 V	1 A	Through Hole	800 V	IPAK TO-251-3 Short Leads TO-251AA	IPAK

Catalog

Power MOSFET, N-Channel, QFET®, 800 V, 1.0 A, 20 Ω, IPAK

Key Features

• 1.0A, 800V,RDS(on)= 20Ω (Max.) @ VGS= 10 V, ID= 0.5 A

• Low Gate Charge (Typ. 5.5 nC)

• Low Crss(Typ. 2.7 pF)

• 100% Avalanche Tested

Description

This N-Channel enhancement mode power MOSFET is produced using ON Semiconductor Semiconductor's proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplied, active power factor correction (PFC), and electronic lamp balasts.