Specification	6N138M

Current - DC Forward (If) (Max) [Max]	20 mA
Current - Output / Channel	60 mA
Current Transfer Ratio (Min) [Min]	300 %
Input Type	DC
Mounting Type	Through Hole
Number of Channels	1
Operating Temperature [Max]	100 °C
Operating Temperature [Min]	-40 °C
Output Type	Darlington with Base
Package / Case	0.3 in
Package / Case	8-DIP
Package / Case	7.62 mm
Supplier Device Package	8-DIP
Turn On / Turn Off Time (Typ)	1 µs, 7.3 µs
Voltage - Forward (Vf) (Typ)	1.3 V
Voltage - Output (Max) [Max]	7 V

6N138M Series

8-Pin DIP Single-Channel Low Input Current High Gain Split Darlington Output Optocoupler

Part	Output Type	Mounting Type	Turn On / Turn Off Time (Typ)	Turn On / Turn Off Time (Typ)	Current - DC Forward (If) (Max) [Max]	Voltage - Forward (Vf) (Typ)	Current - Output / Channel	Package / Case	Package / Case	Package / Case	Current Transfer Ratio (Min) [Min]	Supplier Device Package	Voltage - Output (Max) [Max]	Operating Temperature [Max]	Operating Temperature [Min]	Number of Channels	Input Type	Turn On / Turn Off Time (Typ)	Voltage - Isolation	Package / Case	Turn On / Turn Off Time (Typ) [custom]	Turn On / Turn Off Time (Typ) [custom]
ON Semiconductor 6N138	Darlington with Base	Through Hole	1.35 µs	7.6 µs	25 mA	1.4 V	60 mA	0.3 in	8-DIP	7.62 mm	300 %	8-DIP	7 V	100 °C	-55 °C	1	DC
ON Semiconductor 6N138S	Darlington with Base	Surface Mount			20 mA	1.3 V	60 mA				300 %	8-SMD	7 V	85 °C	-40 °C	1	DC	1.5 µs 7 µs	2500 Vrms
ON Semiconductor 6N138WV	Darlington with Base	Through Hole			20 mA	1.3 V	60 mA	10.16 mm	8-DIP		300 %	8-MDIP	7 V	85 °C	-40 °C	1	DC	1.5 µs 7 µs	2500 Vrms	10.16 mm
ON Semiconductor 6N138SM	Darlington with Base	Surface Mount			20 mA	1.3 V	60 mA				300 %	8-SMD	7 V	100 °C	-40 °C	1	DC	1 µs 7.3 µs
ON Semiconductor 6N138	Darlington with Base	Through Hole			20 mA	1.3 V	60 mA	0.3 in	8-DIP	7.62 mm	300 %	8-DIP	7 V	85 °C	-40 °C	1	DC	1.5 µs 7 µs	2500 Vrms
ON Semiconductor 6N138M	Darlington with Base	Through Hole			20 mA	1.3 V	60 mA	10.16 mm	8-DIP		300 %	8-DIP	7 V	85 °C	-40 °C	1	DC			10.16 mm	1.4 µs	8 µs
ON Semiconductor 6N138W	Darlington with Base	Through Hole			20 mA	1.3 V	60 mA	10.16 mm	8-DIP		300 %	8-MDIP	7 V	85 °C	-40 °C	1	DC	1.5 µs 7 µs	2500 Vrms	10.16 mm
ON Semiconductor 6N138V	Darlington with Base	Through Hole			20 mA	1.3 V	60 mA	0.3 in	8-DIP	7.62 mm	300 %	8-DIP	7 V	85 °C	-40 °C	1	DC	1.5 µs 7 µs	2500 Vrms
ON Semiconductor 6N138M	Darlington with Base	Through Hole			20 mA	1.3 V	60 mA	0.3 in	8-DIP	7.62 mm	300 %	8-DIP	7 V	100 °C	-40 °C	1	DC	1 µs 7.3 µs
ON Semiconductor 6N138S	Darlington with Base	Surface Mount			20 mA	1.3 V	60 mA				300 %	8-SMD	7 V	85 °C	-40 °C	1	DC	1.5 µs 7 µs	2500 Vrms

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Bulk	430	$ 0.70
		430	$ 0.70
	Tube	1	$ 1.37
		1	$ 1.37
		50	$ 0.69
		50	$ 0.69
		100	$ 0.63
		100	$ 0.63
		500	$ 0.61
		500	$ 0.61
ON Semiconductor	N/A	1	$ 0.64

Description

General part information

6N138M Series

The 6N138M/9M and HCPL2730M/31M optocouplers consist of an AlGaAs LED optically coupled to a high gain split darlington photodetector.The split darlington configuration separating the input photodiode and the first stage gain from the output transistor permits lower output saturation voltage and higher speed operation than possible with conventional darlington phototransistor optocoupler. In the dual channel devices, HCPL2730M/HCPL2731M, an integrated emitter-base resistor provides superior stability over temperature.The combination of a very low input current of 0.5mA and a high current transfer ratio of 2000% makes this family particularly useful for input interface to MOS, CMOS, LSTTL and EIA RS232C, while output compatibility is ensured to CMOS as well as high fan-out TTL requirements. An internal noise shield provides exceptional common mode rejection of 10 kV/µs.