Zenode.ai Logo
Beta
8-DIP
Isolators

6N138W

Obsolete
ON Semiconductor

OPTOISO 2.5KV DARL W/BASE 8DIP

Deep-Dive with AI

Search across all available documentation for this part.

8-DIP
Isolators

6N138W

Obsolete
ON Semiconductor

OPTOISO 2.5KV DARL W/BASE 8DIP

Deep-Dive with AI

Technical Specifications

Parameters and characteristics for this part

Specification6N138W
Current - DC Forward (If) (Max) [Max]20 mA
Current - Output / Channel60 mA
Current Transfer Ratio (Min) [Min]300 %
Input TypeDC
Mounting TypeThrough Hole
Number of Channels1
Operating Temperature [Max]85 °C
Operating Temperature [Min]-40 °C
Output TypeDarlington with Base
Package / Case10.16 mm
Package / Case8-DIP
Package / Case10.16 mm
Supplier Device Package8-MDIP
Turn On / Turn Off Time (Typ)1.5 µs, 7 µs
Voltage - Forward (Vf) (Typ)1.3 V
Voltage - Isolation2500 Vrms
Voltage - Output (Max) [Max]7 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$

Description

General part information

6N138M Series

The 6N138M/9M and HCPL2730M/31M optocouplers consist of an AlGaAs LED optically coupled to a high gain split darlington photodetector.The split darlington configuration separating the input photodiode and the first stage gain from the output transistor permits lower output saturation voltage and higher speed operation than possible with conventional darlington phototransistor optocoupler. In the dual channel devices, HCPL2730M/HCPL2731M, an integrated emitter-base resistor provides superior stability over temperature.The combination of a very low input current of 0.5mA and a high current transfer ratio of 2000% makes this family particularly useful for input interface to MOS, CMOS, LSTTL and EIA RS232C, while output compatibility is ensured to CMOS as well as high fan-out TTL requirements. An internal noise shield provides exceptional common mode rejection of 10 kV/µs.

Documents

Technical documentation and resources