Discrete Semiconductor Products
STD80N450K6
ActiveSTMicroelectronics
N-CHANNEL 800 V, 380 MOHM TYP., 10 A MDMESH K6 POWER MOSFET IN A DPAK PACKAGE
Discrete Semiconductor Products
STD80N450K6
ActiveSTMicroelectronics
N-CHANNEL 800 V, 380 MOHM TYP., 10 A MDMESH K6 POWER MOSFET IN A DPAK PACKAGE
Technical Specifications
Parameters and characteristics for this part
| Specification | STD80N450K6 |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 10 A |
| Drain to Source Voltage (Vdss) | 800 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10 V |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 17.3 nC |
| Input Capacitance (Ciss) (Max) @ Vds [Max] | 700 pF |
| Mounting Type | Surface Mount |
| Operating Temperature [Max] | 150 °C |
| Operating Temperature [Min] | -55 °C |
| Package / Case | TO-252-3, SC-63, DPAK (2 Leads + Tab) |
| Power Dissipation (Max) | 83 W |
| Rds On (Max) @ Id, Vgs | 450 mOhm |
| Supplier Device Package | TO-252 (DPAK) |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 30 V |
| Vgs(th) (Max) @ Id | 4 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
| Digikey | N/A | 2200 | $ 4.19 | |
Description
General part information
STD80N450K6 Series
This very high voltage N-channel Power MOSFET is designed using the ultimate MDmesh K6 technology based on 20 years STMicroelectronics experience on super junction technology. The result is the best-in-class on-resistance per area and gate charge for applications requiring superior power density and high efficiency.
Documents
Technical documentation and resources