Specification	FQD8P10TM-F085

Current - Continuous Drain (Id) @ 25°C	6.6 A
Drain to Source Voltage (Vdss)	100 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	P-Channel
Grade	Automotive
Input Capacitance (Ciss) (Max) @ Vds	470 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	SC-63, DPAK (2 Leads + Tab), TO-252-3
Power Dissipation (Max)	2.5 W, 44 W
Qualification	AEC-Q101
Rds On (Max) @ Id, Vgs	530 mOhm
Supplier Device Package	TO-252AA
Technology	MOSFET (Metal Oxide)
Vgs (Max)	30 V
Vgs(th) (Max) @ Id	4 V

FQD8P10TM_F085 Series

-100V, -6.6A, 530mΩ, DPAK P-Channel QFET®

Part	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	FET Type	Operating Temperature [Min]	Operating Temperature [Max]	Vgs(th) (Max) @ Id	Grade	Technology	Mounting Type	Package / Case	Input Capacitance (Ciss) (Max) @ Vds	Qualification	Vgs (Max)	Rds On (Max) @ Id, Vgs	Drain to Source Voltage (Vdss)	Power Dissipation (Max)	Supplier Device Package
ON Semiconductor FQD8P10TM-F085	6.6 A	10 V	P-Channel	-55 °C	150 °C	4 V	Automotive	MOSFET (Metal Oxide)	Surface Mount	DPAK (2 Leads + Tab) SC-63 TO-252-3	470 pF	AEC-Q101	30 V	530 mOhm	100 V	2.5 W 44 W	TO-252AA
ON Semiconductor FQD8P10TM	6.6 A	10 V	P-Channel	-55 °C	150 °C	4 V		MOSFET (Metal Oxide)	Surface Mount	DPAK (2 Leads + Tab) SC-63 TO-252-3	470 pF		30 V	530 mOhm	100 V	2.5 W 44 W	TO-252AA

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Cut Tape (CT)	1	$ 1.33
		10	$ 1.09
		100	$ 0.85
		500	$ 0.72
		1000	$ 0.59
	Digi-Reel®	1	$ 1.33
		10	$ 1.09
		100	$ 0.85
		500	$ 0.72
		1000	$ 0.59
	Tape & Reel (TR)	2500	$ 0.55
		5000	$ 0.53
		12500	$ 0.50
Newark	Each (Supplied on Cut Tape)	1	$ 2.08
		10	$ 1.49
		25	$ 1.37
		50	$ 1.24
		100	$ 1.12
		250	$ 1.04
ON Semiconductor	N/A	1	$ 0.71

Description

General part information

FQD8P10TM_F085 Series

These P-Channel enhancement mode power field effect transistors are produced using a proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for low voltage applications such as audio amplifier, high efficiency switching DC/DC converters, and DC motor control.