FQD8P10TM_F085 Series

-100V, -6.6A, 530mΩ, DPAK P-Channel QFET®

Catalog

-100V, -6.6A, 530mΩ, DPAK P-Channel QFET®

Part	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	FET Type	Operating Temperature [Min]	Operating Temperature [Max]	Vgs(th) (Max) @ Id	Grade	Technology	Mounting Type	Package / Case	Input Capacitance (Ciss) (Max) @ Vds	Qualification	Vgs (Max)	Rds On (Max) @ Id, Vgs	Drain to Source Voltage (Vdss)	Power Dissipation (Max)	Supplier Device Package
ON Semiconductor FQD8P10TM-F085	6.6 A	10 V	P-Channel	-55 °C	150 °C	4 V	Automotive	MOSFET (Metal Oxide)	Surface Mount	DPAK (2 Leads + Tab) SC-63 TO-252-3	470 pF	AEC-Q101	30 V	530 mOhm	100 V	2.5 W 44 W	TO-252AA
ON Semiconductor FQD8P10TM	6.6 A	10 V	P-Channel	-55 °C	150 °C	4 V		MOSFET (Metal Oxide)	Surface Mount	DPAK (2 Leads + Tab) SC-63 TO-252-3	470 pF		30 V	530 mOhm	100 V	2.5 W 44 W	TO-252AA

Catalog

-100V, -6.6A, 530mΩ, DPAK P-Channel QFET®

Key Features

• 6.6A, -100V, RDS(on)= 0.53O @VGS= -10 V

• Low gate charge ( typical 12 nC)

• Low Crss ( typical 30 pF)

• Fast switching

• 100% avalanche tested

• Improved dv/dt capability

• Qualified to AEC Q101

• RoHS Compliant

Description

These P-Channel enhancement mode power field effect transistors are produced using a proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for low voltage applications such as audio amplifier, high efficiency switching DC/DC converters, and DC motor control.