Discrete Semiconductor Products

SCT070W120G3AG

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STMicroelectronics

AUTOMOTIVE-GRADE SILICON CARBIDE POWER MOSFET 1200 V, 63 MOHM TYP., 30 A IN AN HIP247 PACKAGE

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DocumentsSCT070W120G3AG | Datasheet +24

Discrete Semiconductor Products

SCT070W120G3AG

Active

STMicroelectronics

AUTOMOTIVE-GRADE SILICON CARBIDE POWER MOSFET 1200 V, 63 MOHM TYP., 30 A IN AN HIP247 PACKAGE

Deep-Dive with AI

DocumentsSCT070W120G3AG | Datasheet +24

Specifications Series Pricing Description Documents

Technical Specifications

Parameters and characteristics for this part

Specification	SCT070W120G3AG

Current - Continuous Drain (Id) @ 25°C	30 A
Drain to Source Voltage (Vdss)	1.2 kV
Drive Voltage (Max Rds On, Min Rds On)	18 V, 15 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	41 nC
Grade	Automotive
Input Capacitance (Ciss) (Max) @ Vds	900 pF
Mounting Type	Through Hole
Operating Temperature [Max]	200 °C
Operating Temperature [Min]	-55 ░C
Package / Case	TO-247-3
Qualification	AEC-Q101
Rds On (Max) @ Id, Vgs	87 mOhm
Supplier Device Package	HiP247™
Vgs (Max) [Max]	18 V, -5 V
Vgs(th) (Max) @ Id	4.2 V

SCT070W120G3AG Series

Automotive-grade silicon carbide Power MOSFET 1200 V, 63 mOhm typ., 30 A in an HiP247 package

Part	Package / Case	Grade	FET Type	Qualification	Operating Temperature [Max]	Operating Temperature [Min]	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Current - Continuous Drain (Id) @ 25°C	Drain to Source Voltage (Vdss)	Gate Charge (Qg) (Max) @ Vgs [Max]	Input Capacitance (Ciss) (Max) @ Vds	Supplier Device Package	Drive Voltage (Max Rds On, Min Rds On)	Vgs (Max) [Max]	Mounting Type
STMicroelectronics SCT070W120G3AG	TO-247-3	Automotive	N-Channel	AEC-Q101	200 °C	-55 ░C	87 mOhm	4.2 V	30 A	1.2 kV	41 nC	900 pF	HiP247™	15 V 18 V	-5 V 18 V	Through Hole

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	N/A	0	$ 6.67

Description

General part information

SCT070W120G3AG Series

This silicon carbide Power MOSFET device has been developed using ST’s advanced and innovative 3rdgeneration SiC MOSFET technology. The device features a very low RDS(on)over the entire temperature range combined with low capacitances and very high switching operations, which improve application performance in frequency, energy efficiency, system size and weight reduction.