Discrete Semiconductor Products

SI2305CDS-T1-GE3

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MOSFET P-CH 8V 5.8A SOT23-3

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Discrete Semiconductor Products

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MOSFET P-CH 8V 5.8A SOT23-3

Technical Specifications

Parameters and characteristics for this part

Specification	SI2305CDS-T1-GE3

Current - Continuous Drain (Id) @ 25°C	5.8 A
Drain to Source Voltage (Vdss)	8 V
Drive Voltage (Max Rds On, Min Rds On)	4.5 V, 1.8 V
FET Type	P-Channel
Gate Charge (Qg) (Max) @ Vgs	30 nC
Input Capacitance (Ciss) (Max) @ Vds [Max]	960 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	SOT-23-3, TO-236-3, SC-59
Power Dissipation (Max)	1.7 W, 960 mW
Rds On (Max) @ Id, Vgs	35 mOhm
Supplier Device Package	SOT-23-3 (TO-236)
Technology	MOSFET (Metal Oxide)
Vgs (Max)	8 V
Vgs(th) (Max) @ Id	1 V

Part	Vgs (Max)	Gate Charge (Qg) (Max) @ Vgs	Current - Continuous Drain (Id) @ 25°C	Rds On (Max) @ Id, Vgs	Input Capacitance (Ciss) (Max) @ Vds	Mounting Type	Operating Temperature [Max]	Operating Temperature [Min]	Drive Voltage (Max Rds On, Min Rds On)	Package / Case	FET Type	Power Dissipation (Max)	Supplier Device Package	Technology	Vgs(th) (Max) @ Id	Drain to Source Voltage (Vdss)	Input Capacitance (Ciss) (Max) @ Vds [Max]
Vishay General Semiconductor - Diodes Division SI2305ADS-T1-GE3	8 V	15 nC	5.4 A	40 mOhm	740 pF	Surface Mount	150 °C	-50 °C	1.8 V 4.5 V	SC-59 SOT-23-3 TO-236-3	P-Channel	1.7 W 960 mW	SOT-23-3 (TO-236)	MOSFET (Metal Oxide)	800 mV	8 V
Vishay General Semiconductor - Diodes Division SI2305CDS-T1-GE3	8 V	30 nC	5.8 A	35 mOhm		Surface Mount	150 °C	-55 °C	1.8 V 4.5 V	SC-59 SOT-23-3 TO-236-3	P-Channel	1.7 W 960 mW	SOT-23-3 (TO-236)	MOSFET (Metal Oxide)	1 V	8 V	960 pF

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

P-Channel 8 V 5.8A (Tc) 960mW (Ta), 1.7W (Tc) Surface Mount SOT-23-3 (TO-236)

Technical documentation and resources