SI2305 Series
Manufacturer: Vishay General Semiconductor - Diodes Division
Beta
⌘K
MOSFET P-CH 8V 5.4A SOT23-3
| Part | Vgs (Max) | Gate Charge (Qg) (Max) @ Vgs | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Input Capacitance (Ciss) (Max) @ Vds | Mounting Type | Operating Temperature [Max] | Operating Temperature [Min] | Drive Voltage (Max Rds On, Min Rds On) | Package / Case | FET Type | Power Dissipation (Max) | Supplier Device Package | Technology | Vgs(th) (Max) @ Id | Drain to Source Voltage (Vdss) | Input Capacitance (Ciss) (Max) @ Vds [Max] |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 Vishay General Semiconductor - Diodes Division | 8 V | 15 nC | 5.4 A | 40 mOhm | 740 pF | Surface Mount | 150 °C | -50 °C | 1.8 V 4.5 V | SC-59 SOT-23-3 TO-236-3 | P-Channel | 1.7 W 960 mW | SOT-23-3 (TO-236) | MOSFET (Metal Oxide) | 800 mV | 8 V | |
Vishay General Semiconductor - Diodes Division | 8 V | 30 nC | 5.8 A | 35 mOhm | Surface Mount | 150 °C | -55 °C | 1.8 V 4.5 V | SC-59 SOT-23-3 TO-236-3 | P-Channel | 1.7 W 960 mW | SOT-23-3 (TO-236) | MOSFET (Metal Oxide) | 1 V | 8 V | 960 pF |