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8-VSON
Discrete Semiconductor Products

CSD87503Q3ET

Active
Texas Instruments

30-V, N CHANNEL NEXFET™ POWER MOSFET, DUAL COMMON SOURCE SON 3 MM X 3 MM, 21.9 MOHM

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8-VSON
Discrete Semiconductor Products

CSD87503Q3ET

Active
Texas Instruments

30-V, N CHANNEL NEXFET™ POWER MOSFET, DUAL COMMON SOURCE SON 3 MM X 3 MM, 21.9 MOHM

Technical Specifications

Parameters and characteristics for this part

SpecificationCSD87503Q3ET
Configuration2 N-Channel (Dual) Common Source
Current - Continuous Drain (Id) @ 25°C10 A
Drain to Source Voltage (Vdss)30 V
Gate Charge (Qg) (Max) @ Vgs [Max]17.4 nC
Input Capacitance (Ciss) (Max) @ Vds1020 pF
Mounting TypeSurface Mount
Operating Temperature [Max]150 °C
Operating Temperature [Min]-55 °C
Package / Case8-PowerVDFN
Power - Max [Max]15.6 W
Supplier Device Package8-VSON (3.3x3.3)
TechnologyMOSFET (Metal Oxide)
Vgs(th) (Max) @ Id2.1 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyCut Tape (CT) 1$ 1.72
10$ 1.54
25$ 1.45
100$ 1.24
Digi-Reel® 1$ 1.72
10$ 1.54
25$ 1.45
100$ 1.24
Tape & Reel (TR) 250$ 1.16
500$ 1.02
1250$ 0.84
2500$ 0.79
6250$ 0.76
12500$ 0.73
Texas InstrumentsSMALL T&R 1$ 1.42
100$ 1.09
250$ 0.81
1000$ 0.58

Description

General part information

CSD87503Q3E Series

The CSD87503Q3E is a 30-V, 13.5-mΩ, common source, dual N-channel device designed for USB Type-C/PD and battery protection. This SON 3.3 × 3.3 mm device has low drain-to-drain on-resistance that minimizes losses and offers low component count for space constrained applications.

The CSD87503Q3E is a 30-V, 13.5-mΩ, common source, dual N-channel device designed for USB Type-C/PD and battery protection. This SON 3.3 × 3.3 mm device has low drain-to-drain on-resistance that minimizes losses and offers low component count for space constrained applications.