CSD87503Q3E Series

30-V, N channel NexFET™ power MOSFET, dual common source SON 3 mm x 3 mm, 21.9 mOhm

Catalog

30-V, N channel NexFET™ power MOSFET, dual common source SON 3 mm x 3 mm, 21.9 mOhm

Part	Vgs(th) (Max) @ Id	Technology	Package / Case	Mounting Type	Power - Max [Max]	Configuration	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Operating Temperature [Min]	Operating Temperature [Max]	Supplier Device Package	Gate Charge (Qg) (Max) @ Vgs [Max]	Input Capacitance (Ciss) (Max) @ Vds
Texas Instruments CSD87503Q3ET	2.1 V	MOSFET (Metal Oxide)	8-PowerVDFN	Surface Mount	15.6 W	2 N-Channel (Dual) Common Source	30 V	10 A	-55 °C	150 °C	8-VSON (3.3x3.3)	17.4 nC	1020 pF

Catalog

30-V, N channel NexFET™ power MOSFET, dual common source SON 3 mm x 3 mm, 21.9 mOhm

Key Features

• Dual N-Ch Common Source MOSFETsOptimized for 5-V Gate DriveLow-Thermal ResistanceLow Qgand QgdLead-Free Terminal PlatingRoHS CompliantHalogen FreeSON 3.3-mm × 3.3-mm Plastic PackageDual N-Ch Common Source MOSFETsOptimized for 5-V Gate DriveLow-Thermal ResistanceLow Qgand QgdLead-Free Terminal PlatingRoHS CompliantHalogen FreeSON 3.3-mm × 3.3-mm Plastic Package

Description

The CSD87503Q3E is a 30-V, 13.5-mΩ, common source, dual N-channel device designed for USB Type-C/PD and battery protection. This SON 3.3 × 3.3 mm device has low drain-to-drain on-resistance that minimizes losses and offers low component count for space constrained applications. The CSD87503Q3E is a 30-V, 13.5-mΩ, common source, dual N-channel device designed for USB Type-C/PD and battery protection. This SON 3.3 × 3.3 mm device has low drain-to-drain on-resistance that minimizes losses and offers low component count for space constrained applications.