Discrete Semiconductor Products

KSC1730OBU

Obsolete

RF TRANS NPN 15V 1.1GHZ TO-92-3

Search across all available documentation for this part.

Discrete Semiconductor Products

Obsolete

RF TRANS NPN 15V 1.1GHZ TO-92-3

Technical Specifications

Parameters and characteristics for this part

Specification	KSC1730OBU

Current - Collector (Ic) (Max) [Max]	50 mA
DC Current Gain (hFE) (Min) @ Ic, Vce	70 hFE
Frequency - Transition	1.1 GHz
Mounting Type	Through Hole
Operating Temperature	150 °C
Package / Case	TO-226-3, TO-92-3
Power - Max [Max]	250 mW
Supplier Device Package	TO-92-3
Transistor Type	NPN
Voltage - Collector Emitter Breakdown (Max)	15 V

Part	Operating Temperature	Package / Case	Supplier Device Package	Frequency - Transition	DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	Mounting Type	Power - Max [Max]	Current - Collector (Ic) (Max) [Max]	Transistor Type	Voltage - Collector Emitter Breakdown (Max)	DC Current Gain (hFE) (Min) @ Ic, Vce
ON Semiconductor KSC1730YBU	150 °C	TO-226-3 TO-92-3	TO-92-3	1.1 GHz	120	Through Hole	250 mW	50 mA	NPN	15 V
ON Semiconductor KSC1730OBU	150 °C	TO-226-3 TO-92-3	TO-92-3	1.1 GHz		Through Hole	250 mW	50 mA	NPN	15 V	70 hFE
ON Semiconductor KSC1730YTA	150 °C	TO-226-3 TO-92-3	TO-92-3	1.1 GHz	120	Through Hole	250 mW	50 mA	NPN	15 V
ON Semiconductor KSC1730OTA	150 °C	TO-226-3 TO-92-3	TO-92-3	1.1 GHz		Through Hole	250 mW	50 mA	NPN	15 V	70 hFE
ON Semiconductor KSC1730YBU	150 °C	TO-226-3 TO-92-3	TO-92-3	1.1 GHz	120	Through Hole	250 mW	50 mA	NPN	15 V

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

RF Transistor NPN 15V 50mA 1.1GHz 250mW Through Hole TO-92-3

Technical documentation and resources