Discrete Semiconductor Products

KSC1730YBU

Obsolete

RF TRANS NPN 15V 1.1GHZ TO92-3

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Discrete Semiconductor Products

Obsolete

RF TRANS NPN 15V 1.1GHZ TO92-3

Technical Specifications

Parameters and characteristics for this part

Specification	KSC1730YBU

Current - Collector (Ic) (Max) [Max]	50 mA
DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	120
Frequency - Transition	1.1 GHz
Mounting Type	Through Hole
Operating Temperature	150 °C
Package / Case	TO-226-3, TO-92-3
Power - Max [Max]	250 mW
Supplier Device Package	TO-92-3
Transistor Type	NPN
Voltage - Collector Emitter Breakdown (Max)	15 V

Part	Operating Temperature	Package / Case	Supplier Device Package	Frequency - Transition	DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	Mounting Type	Power - Max [Max]	Current - Collector (Ic) (Max) [Max]	Transistor Type	Voltage - Collector Emitter Breakdown (Max)	DC Current Gain (hFE) (Min) @ Ic, Vce
ON Semiconductor KSC1730YBU	150 °C	TO-226-3 TO-92-3	TO-92-3	1.1 GHz	120	Through Hole	250 mW	50 mA	NPN	15 V
ON Semiconductor KSC1730OBU	150 °C	TO-226-3 TO-92-3	TO-92-3	1.1 GHz		Through Hole	250 mW	50 mA	NPN	15 V	70 hFE
ON Semiconductor KSC1730YTA	150 °C	TO-226-3 TO-92-3	TO-92-3	1.1 GHz	120	Through Hole	250 mW	50 mA	NPN	15 V
ON Semiconductor KSC1730OTA	150 °C	TO-226-3 TO-92-3	TO-92-3	1.1 GHz		Through Hole	250 mW	50 mA	NPN	15 V	70 hFE
ON Semiconductor KSC1730YBU	150 °C	TO-226-3 TO-92-3	TO-92-3	1.1 GHz	120	Through Hole	250 mW	50 mA	NPN	15 V

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

RF Transistor NPN 15V 50mA 1.1GHz 250mW Through Hole TO-92-3

Technical documentation and resources