Specification	HGTP3N60A4

Current - Collector (Ic) (Max) [Max]	17 A
Current - Collector Pulsed (Icm)	40 A
Gate Charge	21 nC
Mounting Type	Through Hole
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	TO-220-3
Power - Max [Max]	70 W
Supplier Device Package	TO-220-3
Switching Energy	25 µJ, 37 µJ
Td (on/off) @ 25°C	6 ns, 73 ns
Test Condition	15 V, 3 A, 390 V, 50 Ohm
Vce(on) (Max) @ Vge, Ic	2.7 V
Voltage - Collector Emitter Breakdown (Max) [Max]	600 V

HGTP3N60A4 Series

IGBT, 600V, SMPS

Part	Test Condition	Td (on/off) @ 25°C	Operating Temperature [Min]	Operating Temperature [Max]	Power - Max [Max]	Supplier Device Package	Current - Collector (Ic) (Max) [Max]	Vce(on) (Max) @ Vge, Ic	Voltage - Collector Emitter Breakdown (Max) [Max]	Package / Case	Mounting Type	Gate Charge	Switching Energy	Current - Collector Pulsed (Icm)
ON Semiconductor HGTP3N60A4	3 A 15 V 50 Ohm 390 V	6 ns 73 ns	-55 °C	150 °C	70 W	TO-220-3	17 A	2.7 V	600 V	TO-220-3	Through Hole	21 nC	25 µJ 37 µJ	40 A

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Tube	228	$ 1.32

Description

General part information

HGTP3N60A4 Series

The HGTP3N60A4 combines the best features of high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. This IGBT is ideal for many high voltage switching applications operating at high frequencies where low conduction losses are essential. This device has been optimized for fast switching applications, such as UPS and welder.