HGTP3N60A4 Series

IGBT, 600V, SMPS

Catalog

IGBT, 600V, SMPS

Part	Test Condition	Td (on/off) @ 25°C	Operating Temperature [Min]	Operating Temperature [Max]	Power - Max [Max]	Supplier Device Package	Current - Collector (Ic) (Max) [Max]	Vce(on) (Max) @ Vge, Ic	Voltage - Collector Emitter Breakdown (Max) [Max]	Package / Case	Mounting Type	Gate Charge	Switching Energy	Current - Collector Pulsed (Icm)
ON Semiconductor HGTP3N60A4	3 A 15 V 50 Ohm 390 V	6 ns 73 ns	-55 °C	150 °C	70 W	TO-220-3	17 A	2.7 V	600 V	TO-220-3	Through Hole	21 nC	25 µJ 37 µJ	40 A

Catalog

IGBT, 600V, SMPS

Key Features

• 8A, 600V @ TC= 110°C

• Low Saturation Voltage : VCE(sat)= 2.0 V @ IC= 3A

• Typical Fall Time. . . . . . . . . . 70ns at TJ= 125°C

• Low Conduction Loss

Description

The HGTP3N60A4 combines the best features of high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. This IGBT is ideal for many high voltage switching applications operating at high frequencies where low conduction losses are essential. This device has been optimized for fast switching applications, such as UPS and welder.