Specification	FDB8896

Current - Continuous Drain (Id) @ 25°C	19 A, 93 A
Drain to Source Voltage (Vdss)	30 V
Drive Voltage (Max Rds On, Min Rds On)	10 V, 4.5 V
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds	2525 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	175 ░C
Operating Temperature [Min]	-55 °C
Package / Case	D2PAK (2 Leads + Tab), TO-263AB, TO-263-3
Power Dissipation (Max)	80 W
Rds On (Max) @ Id, Vgs	5.7 mOhm
Supplier Device Package	TO-263 (D2PAK)
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	2.5 V

FDB8896 Series

N-Channel PowerTrench® MOSFET, 30V, 93A, 5.7mΩ

Part	Power Dissipation (Max)	Operating Temperature [Min]	Operating Temperature [Max]	Package / Case	FET Type	Drain to Source Voltage (Vdss)	Input Capacitance (Ciss) (Max) @ Vds	Supplier Device Package	Current - Continuous Drain (Id) @ 25°C	Vgs(th) (Max) @ Id	Technology	Rds On (Max) @ Id, Vgs	Drive Voltage (Max Rds On, Min Rds On)	Mounting Type	Vgs (Max)
ON Semiconductor FDB8896	80 W	-55 °C	175 ░C	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	N-Channel	30 V	2525 pF	TO-263 (D2PAK)	19 A 93 A	2.5 V	MOSFET (Metal Oxide)	5.7 mOhm	4.5 V 10 V	Surface Mount	20 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Bulk	330	$ 0.91

Description

General part information

FDB8896 Series

This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low rDS(ON)and fast switching speed.