FDB8896 Series

N-Channel PowerTrench® MOSFET, 30V, 93A, 5.7mΩ

Catalog

N-Channel PowerTrench® MOSFET, 30V, 93A, 5.7mΩ

Part	Power Dissipation (Max)	Operating Temperature [Min]	Operating Temperature [Max]	Package / Case	FET Type	Drain to Source Voltage (Vdss)	Input Capacitance (Ciss) (Max) @ Vds	Supplier Device Package	Current - Continuous Drain (Id) @ 25°C	Vgs(th) (Max) @ Id	Technology	Rds On (Max) @ Id, Vgs	Drive Voltage (Max Rds On, Min Rds On)	Mounting Type	Vgs (Max)
ON Semiconductor FDB8896	80 W	-55 °C	175 ░C	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	N-Channel	30 V	2525 pF	TO-263 (D2PAK)	19 A 93 A	2.5 V	MOSFET (Metal Oxide)	5.7 mOhm	4.5 V 10 V	Surface Mount	20 V

Catalog

N-Channel PowerTrench® MOSFET, 30V, 93A, 5.7mΩ

Key Features

• rDS(ON)= 5.7mΩ @ VGS= 10V, ID=35A

• rDS(ON)= 6.8mΩ @ VGS= 4.5V, ID=35A

• High performance trench technology for extremely low rDS(ON)

• Low gate charge

• High power and current handling capability

Description

This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low rDS(ON)and fast switching speed.