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TO-263
Discrete Semiconductor Products

NTBS2D7N06M7

Active
ON Semiconductor

POWER MOSFET, N-CHANNEL, STANDARD GATE, 60 V, 110 A, 2.7 MΩ

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TO-263
Discrete Semiconductor Products

NTBS2D7N06M7

Active
ON Semiconductor

POWER MOSFET, N-CHANNEL, STANDARD GATE, 60 V, 110 A, 2.7 MΩ

Deep-Dive with AI

Technical Specifications

Parameters and characteristics for this part

SpecificationNTBS2D7N06M7
Current - Continuous Drain (Id) @ 25°C110 A
Drain to Source Voltage (Vdss)60 V
Drive Voltage (Max Rds On, Min Rds On)10 V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]110 nC
Input Capacitance (Ciss) (Max) @ Vds6655 pF
Mounting TypeSurface Mount
Operating Temperature [Max]175 ░C
Operating Temperature [Min]-55 °C
Package / CaseD2PAK (2 Leads + Tab), TO-263AB, TO-263-3
Power Dissipation (Max)176 W
Rds On (Max) @ Id, Vgs2.7 mOhm
Supplier Device PackageTO-263 (D2PAK)
TechnologyMOSFET (Metal Oxide)
Vgs (Max)20 V
Vgs(th) (Max) @ Id4 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyCut Tape (CT) 1$ 8.07
10$ 5.50
100$ 4.04
Digi-Reel® 1$ 8.07
10$ 5.50
100$ 4.04
Tape & Reel (TR) 800$ 3.58
NewarkEach (Supplied on Cut Tape) 1$ 10.02
10$ 7.65
25$ 7.63
50$ 6.92
100$ 6.20
250$ 6.09
500$ 5.96
1600$ 5.85
ON SemiconductorN/A 1$ 3.29

Description

General part information

NTBS2D7N06M7 Series

This N-Channel MV MOSFET is produced using ON Semiconductor’s advanced Power Trench process that incorporates Shielded Gate technology. This process has been optimized to minimize on-state resistance and yet maintain superior switching performance with best in class soft body diode.