NTBS2D7N06M7 Series

Power MOSFET, N-Channel, Standard Gate, 60 V, 110 A, 2.7 mΩ

Catalog

Power MOSFET, N-Channel, Standard Gate, 60 V, 110 A, 2.7 mΩ

Part	Gate Charge (Qg) (Max) @ Vgs [Max]	Drive Voltage (Max Rds On, Min Rds On)	Power Dissipation (Max)	Mounting Type	Drain to Source Voltage (Vdss)	Package / Case	Vgs (Max)	FET Type	Vgs(th) (Max) @ Id	Input Capacitance (Ciss) (Max) @ Vds	Rds On (Max) @ Id, Vgs	Current - Continuous Drain (Id) @ 25°C	Supplier Device Package	Technology	Operating Temperature [Min]	Operating Temperature [Max]
ON Semiconductor NTBS2D7N06M7	110 nC	10 V	176 W	Surface Mount	60 V	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	20 V	N-Channel	4 V	6655 pF	2.7 mOhm	110 A	TO-263 (D2PAK)	MOSFET (Metal Oxide)	-55 °C	175 ░C

Catalog

Power MOSFET, N-Channel, Standard Gate, 60 V, 110 A, 2.7 mΩ

Key Features

• Low Qrr

• Soft recovery body diode

• Low RDS(on)

• RoHS compliant

• UIS Capability

Description

This N-Channel MV MOSFET is produced using ON Semiconductor’s advanced Power Trench process that incorporates Shielded Gate technology. This process has been optimized to minimize on-state resistance and yet maintain superior switching performance with best in class soft body diode.