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Technical Specifications
Parameters and characteristics for this part
| Specification | JANS2N6990 |
|---|---|
| Current - Collector (Ic) (Max) [Max] | 800 mA |
| Current - Collector Cutoff (Max) [Max] | 10 µA |
| DC Current Gain (hFE) (Min) @ Ic, Vce [Min] | 100 |
| Grade | Military |
| Mounting Type | Surface Mount |
| Package / Case | 14-FlatPack |
| Power - Max [Max] | 400 mW |
| Qualification | MIL-PRF-19500/559 |
| Supplier Device Package | 14-FlatPack |
| Transistor Type | 4 NPN (Quad) |
| Vce Saturation (Max) @ Ib, Ic | 1 V |
| Voltage - Collector Emitter Breakdown (Max) [Max] | 50 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
| Digikey | Bulk | 50 | $ 148.21 | |
Description
General part information
2N6990 Series
Bipolar (BJT) Transistor Array 4 NPN (Quad) 50V 800mA 400mW Surface Mount 14-FlatPack
Documents
Technical documentation and resources
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