Discrete Semiconductor Products

FQU3P50TU

Obsolete

MOSFET P-CH 500V 2.1A IPAK

Search across all available documentation for this part.

Discrete Semiconductor Products

Obsolete

MOSFET P-CH 500V 2.1A IPAK

Technical Specifications

Parameters and characteristics for this part

Specification	FQU3P50TU

Current - Continuous Drain (Id) @ 25°C	2.1 A
Drain to Source Voltage (Vdss)	500 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	P-Channel
Gate Charge (Qg) (Max) @ Vgs	23 nC
Mounting Type	Through Hole
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	IPAK, TO-251-3 Short Leads, TO-251AA
Power Dissipation (Max)	50 W, 2.5 W
Rds On (Max) @ Id, Vgs	4.9 Ohm
Supplier Device Package	IPAK
Technology	MOSFET (Metal Oxide)
Vgs (Max)	30 V
Vgs(th) (Max) @ Id	5 V

Part	Gate Charge (Qg) (Max) @ Vgs [Max]	Power Dissipation (Max)	Vgs(th) (Max) @ Id	Technology	Supplier Device Package	Vgs (Max)	Drive Voltage (Max Rds On, Min Rds On)	Package / Case	Drain to Source Voltage (Vdss)	Mounting Type	Operating Temperature [Min]	Operating Temperature [Max]	Current - Continuous Drain (Id) @ 25°C	FET Type	Input Capacitance (Ciss) (Max) @ Vds [Max]	Rds On (Max) @ Id, Vgs	Gate Charge (Qg) (Max) @ Vgs
ON Semiconductor FQU3N60TU	13 nC	2.5 W 50 W	5 V	MOSFET (Metal Oxide)	IPAK	30 V	10 V	IPAK TO-251-3 Short Leads TO-251AA	600 V	Through Hole	-55 °C	150 °C	2.4 A	N-Channel	450 pF	3.6 Ohm
ON Semiconductor FQU3P50TU		2.5 W 50 W	5 V	MOSFET (Metal Oxide)	IPAK	30 V	10 V	IPAK TO-251-3 Short Leads TO-251AA	500 V	Through Hole	-55 °C	150 °C	2.1 A	P-Channel		4.9 Ohm	23 nC
ON Semiconductor FQU3N60TU	13 nC	2.5 W 50 W	5 V	MOSFET (Metal Oxide)	IPAK	30 V	10 V	IPAK TO-251-3 Short Leads TO-251AA	600 V	Through Hole	-55 °C	150 °C	2.4 A	N-Channel	450 pF	3.6 Ohm

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

P-Channel 500 V 2.1A (Tc) 2.5W (Ta), 50W (Tc) Through Hole IPAK

Technical documentation and resources