FQU3 Series

Catalog

MOSFET N-CH 600V 2.4A IPAK

Part	Gate Charge (Qg) (Max) @ Vgs [Max]	Power Dissipation (Max)	Vgs(th) (Max) @ Id	Technology	Supplier Device Package	Vgs (Max)	Drive Voltage (Max Rds On, Min Rds On)	Package / Case	Drain to Source Voltage (Vdss)	Mounting Type	Operating Temperature [Min]	Operating Temperature [Max]	Current - Continuous Drain (Id) @ 25°C	FET Type	Input Capacitance (Ciss) (Max) @ Vds [Max]	Rds On (Max) @ Id, Vgs	Gate Charge (Qg) (Max) @ Vgs
ON Semiconductor FQU3N60TU	13 nC	2.5 W 50 W	5 V	MOSFET (Metal Oxide)	IPAK	30 V	10 V	IPAK TO-251-3 Short Leads TO-251AA	600 V	Through Hole	-55 °C	150 °C	2.4 A	N-Channel	450 pF	3.6 Ohm
ON Semiconductor FQU3P50TU		2.5 W 50 W	5 V	MOSFET (Metal Oxide)	IPAK	30 V	10 V	IPAK TO-251-3 Short Leads TO-251AA	500 V	Through Hole	-55 °C	150 °C	2.1 A	P-Channel		4.9 Ohm	23 nC
ON Semiconductor FQU3N60TU	13 nC	2.5 W 50 W	5 V	MOSFET (Metal Oxide)	IPAK	30 V	10 V	IPAK TO-251-3 Short Leads TO-251AA	600 V	Through Hole	-55 °C	150 °C	2.4 A	N-Channel	450 pF	3.6 Ohm