Discrete Semiconductor Products

PCFF30H120SWF

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1200V/30A GEN7 FRD HS SAWN-ON-FO

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Discrete Semiconductor Products

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1200V/30A GEN7 FRD HS SAWN-ON-FO

Technical Specifications

Parameters and characteristics for this part

Specification	PCFF30H120SWF

Current - Average Rectified (Io)	30 A
Current - Reverse Leakage @ Vr	16 A
Mounting Type	Surface Mount
Operating Temperature - Junction [Max]	175 ░C
Operating Temperature - Junction [Min]	-40 °C
Package / Case	Die
Reverse Recovery Time (trr)	222 ns
Speed	200 mA, 500 ns
Supplier Device Package	Wafer
Technology	Standard
Voltage - DC Reverse (Vr) (Max) [Max]	1.2 kV
Voltage - Forward (Vf) (Max) @ If	1.9 V

Power Diode Bare Die

Part	Current - Reverse Leakage @ Vr	Voltage - Forward (Vf) (Max) @ If	Package / Case	Operating Temperature - Junction [Min]	Operating Temperature - Junction [Max]	Voltage - DC Reverse (Vr) (Max) [Max]	Reverse Recovery Time (trr)	Speed	Mounting Type	Current - Average Rectified (Io)	Technology	Supplier Device Package
ON Semiconductor PCFF30H120SWF	16 A	1.9 V	Die	-40 °C	175 ░C	1.2 kV	222 ns	200 mA 500 ns	Surface Mount	30 A	Standard	Wafer

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

1200 V, 30 A, Gen VII, Fast Recovery Diode

Technical documentation and resources