Catalog
Power Diode Bare Die
Key Features
• Advanced Gen VII Technology
• Fast and Soft Recovery
• Low Forward Voltage
• Easy to Parallel Operation
Description
AI
1200 V, 30 A, Gen VII, Fast Recovery Diode
Beta
⌘K
Power Diode Bare Die
Power Diode Bare Die
| Part | Current - Reverse Leakage @ Vr | Voltage - Forward (Vf) (Max) @ If | Package / Case | Operating Temperature - Junction [Min] | Operating Temperature - Junction [Max] | Voltage - DC Reverse (Vr) (Max) [Max] | Reverse Recovery Time (trr) | Speed | Mounting Type | Current - Average Rectified (Io) | Technology | Supplier Device Package |
|---|---|---|---|---|---|---|---|---|---|---|---|---|
 ON Semiconductor | 16 A | 1.9 V | Die | -40 °C | 175 ░C | 1.2 kV | 222 ns | 200 mA 500 ns | Surface Mount | 30 A | Standard | Wafer |