Specification	FJA4210OTU

Current - Collector Cutoff (Max) [Max]	10 µA
DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	70
Frequency - Transition	30 MHz
Mounting Type	Through Hole
Operating Temperature	150 °C
Package / Case	SC-65-3, TO-3P-3
Power - Max [Max]	100 W
Supplier Device Package	TO-3P
Transistor Type	PNP
Vce Saturation (Max) @ Ib, Ic	500 mV
Voltage - Collector Emitter Breakdown (Max)	140 V

FJA4210 Series

Part	Power - Max [Max]	Package / Case	Operating Temperature	Vce Saturation (Max) @ Ib, Ic	Current - Collector Cutoff (Max) [Max]	DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	Transistor Type	Mounting Type	Voltage - Collector Emitter Breakdown (Max)	Frequency - Transition	Supplier Device Package
ON Semiconductor FJA4210OTU	100 W	SC-65-3 TO-3P-3	150 °C	500 mV	10 µA	70	PNP	Through Hole	140 V	30 MHz	TO-3P
ON Semiconductor FJA4210RTU	100 W	SC-65-3 TO-3P-3	150 °C	500 mV	10 µA	50 hFE	PNP	Through Hole	140 V	30 MHz	TO-3P

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

Bipolar (BJT) Transistor PNP 140 V 10 A 30MHz 100 W Through Hole TO-3P

Technical documentation and resources