FJA4210 Series

Catalog

PNP EPITAXIAL SILICON TRANSISTOR

Part	Power - Max [Max]	Package / Case	Operating Temperature	Vce Saturation (Max) @ Ib, Ic	Current - Collector Cutoff (Max) [Max]	DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	Transistor Type	Mounting Type	Voltage - Collector Emitter Breakdown (Max)	Frequency - Transition	Supplier Device Package
ON Semiconductor FJA4210OTU	100 W	SC-65-3 TO-3P-3	150 °C	500 mV	10 µA	70	PNP	Through Hole	140 V	30 MHz	TO-3P
ON Semiconductor FJA4210RTU	100 W	SC-65-3 TO-3P-3	150 °C	500 mV	10 µA	50 hFE	PNP	Through Hole	140 V	30 MHz	TO-3P