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8-SOIC
Discrete Semiconductor Products

FDS8672S

Active
ON Semiconductor

N-CHANNEL POWERTRENCH<SUP>®</SUP> SYNCFET™ 30V, 18A, 4.8MΩ

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8-SOIC
Discrete Semiconductor Products

FDS8672S

Active
ON Semiconductor

N-CHANNEL POWERTRENCH<SUP>®</SUP> SYNCFET™ 30V, 18A, 4.8MΩ

Deep-Dive with AI

Technical Specifications

Parameters and characteristics for this part

SpecificationFDS8672S
Current - Continuous Drain (Id) @ 25°C18 A
Drain to Source Voltage (Vdss)30 V
Drive Voltage (Max Rds On, Min Rds On)10 V, 4.5 V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]41 nC
Input Capacitance (Ciss) (Max) @ Vds2670 pF
Mounting TypeSurface Mount
Operating Temperature [Max]150 °C
Operating Temperature [Min]-55 °C
Package / Case8-SOIC
Package / Case [x]0.154 in
Package / Case [y]3.9 mm
Power Dissipation (Max)2.5 W
Rds On (Max) @ Id, Vgs4.8 mOhm
Supplier Device Package8-SOIC
TechnologyMOSFET (Metal Oxide)
Vgs (Max)20 V
Vgs(th) (Max) @ Id3 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyBulk 307$ 0.98
307$ 0.98
Cut Tape (CT) 1$ 2.75
1$ 2.75
10$ 1.78
10$ 1.78
100$ 1.22
100$ 1.22
500$ 0.98
500$ 0.98
1000$ 0.91
1000$ 0.91
Digi-Reel® 1$ 2.75
1$ 2.75
10$ 1.78
10$ 1.78
100$ 1.22
100$ 1.22
500$ 0.98
500$ 0.98
1000$ 0.91
1000$ 0.91

Description

General part information

FDS8672S Series

The FDS8672S is designed to replace a single MOSFET and Schottky diode in synchronous DC/DC power supplies. This 30V MOSFET is designed to maximize power conversion efficiency, providing a low rDS(on)and low gate charge. The FDS8672S includes a patented combination of a MOSFET monolithically integrated with a Schottky diode using a monolithic SyncFET technology.