Discrete Semiconductor Products

SQJ264EP-T1_GE3

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MOSFET 2N-CH 60V 20A PPAK SO8

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Discrete Semiconductor Products

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MOSFET 2N-CH 60V 20A PPAK SO8

Technical Specifications

Parameters and characteristics for this part

Specification	SQJ264EP-T1_GE3

Configuration	2 N-Channel (Dual) Asymmetrical
Current - Continuous Drain (Id) @ 25°C	54 A, 20 A
Drain to Source Voltage (Vdss)	60 V
Gate Charge (Qg) (Max) @ Vgs	16 nC
Gate Charge (Qg) (Max) @ Vgs	32 nC
Grade	Automotive
Input Capacitance (Ciss) (Max) @ Vds	1000 pF, 2100 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	175 ░C
Operating Temperature [Min]	-55 °C
Package / Case	PowerPAK® SO-8 Dual
Power - Max	48 W, 27 W
Qualification	AEC-Q101
Rds On (Max) @ Id, Vgs	20 mOhm, 8.6 mOhm
Supplier Device Package	PowerPAK® SO-8 Dual Asymmetric
Technology	MOSFET (Metal Oxide)
Vgs(th) (Max) @ Id	3.5 V

Part	Configuration	Power - Max	Input Capacitance (Ciss) (Max) @ Vds	Technology	Grade	Qualification	Package / Case	Vgs(th) (Max) @ Id	Rds On (Max) @ Id, Vgs	Operating Temperature [Min]	Operating Temperature [Max]	Drain to Source Voltage (Vdss)	Gate Charge (Qg) (Max) @ Vgs	Gate Charge (Qg) (Max) @ Vgs	Supplier Device Package	Mounting Type	Current - Continuous Drain (Id) @ 25°C
Vishay General Semiconductor - Diodes Division SQJ264EP-T1_GE3	2 N-Channel (Dual) Asymmetrical	27 W 48 W	1000 pF 2100 pF	MOSFET (Metal Oxide)	Automotive	AEC-Q101	PowerPAK® SO-8 Dual	3.5 V	8.6 mOhm 20 mOhm	-55 °C	175 ░C	60 V	16 nC	32 nC	PowerPAK® SO-8 Dual Asymmetric	Surface Mount	20 A 54 A

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General part information

Mosfet Array 60V 20A (Tc), 54A (Tc) 27W (Tc), 48W (Tc) Surface Mount PowerPAK® SO-8 Dual Asymmetric

Technical documentation and resources