SQJ264 Series
Manufacturer: Vishay General Semiconductor - Diodes Division
MOSFET 2N-CH 60V 20A PPAK SO8
| Part | Configuration | Power - Max | Input Capacitance (Ciss) (Max) @ Vds | Technology | Grade | Qualification | Package / Case | Vgs(th) (Max) @ Id | Rds On (Max) @ Id, Vgs | Operating Temperature [Min] | Operating Temperature [Max] | Drain to Source Voltage (Vdss) | Gate Charge (Qg) (Max) @ Vgs | Gate Charge (Qg) (Max) @ Vgs | Supplier Device Package | Mounting Type | Current - Continuous Drain (Id) @ 25°C |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Vishay General Semiconductor - Diodes Division | 2 N-Channel (Dual) Asymmetrical | 27 W 48 W | 1000 pF 2100 pF | MOSFET (Metal Oxide) | Automotive | AEC-Q101 | PowerPAK® SO-8 Dual | 3.5 V | 8.6 mOhm 20 mOhm | -55 °C | 175 ░C | 60 V | 16 nC | 32 nC | PowerPAK® SO-8 Dual Asymmetric | Surface Mount | 20 A 54 A |