EMG2DXV5T1G
ObsoleteDUAL NPN BIPOLAR DIGITAL TRANSISTOR (BRT)
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EMG2DXV5T1G
ObsoleteDUAL NPN BIPOLAR DIGITAL TRANSISTOR (BRT)
Deep-Dive with AI
Technical Specifications
Parameters and characteristics for this part
| Specification | EMG2DXV5T1G |
|---|---|
| Current - Collector (Ic) (Max) [Max] | 100 mA |
| Current - Collector Cutoff (Max) [Max] | 500 nA |
| DC Current Gain (hFE) (Min) @ Ic, Vce [Min] | 80 |
| Mounting Type | Surface Mount |
| Package / Case | SOT-553 |
| Power - Max [Max] | 230 mW |
| Resistor - Base (R1) | 47 kOhms |
| Resistor - Emitter Base (R2) | 47000 Ohms |
| Supplier Device Package | SOT-553 |
| Transistor Type | 2 NPN - Pre-Biased (Dual) |
| Vce Saturation (Max) @ Ib, Ic | 250 mV |
| Voltage - Collector Emitter Breakdown (Max) [Max] | 50 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
| ON Semiconductor | N/A | 1 | $ 0.07 | |
Description
General part information
EMG2DXV5 Series
The Dual NPN Bipolar Digital Transistor is designed to replace a single device and its external resistor bias network. The Dual PNP Bipolar Digital Transistor contains a single transistor with a monolithic bias network consisting of two resistors: a series base resistor and a base-emitter resistor. This eliminates these individual components by integrating them into a single device. This can reduce both system cost and board space. The device is housed in the SOT-553 package which is designed for low power surface mount applications.
Documents
Technical documentation and resources