EMG2DXV5 Series

Dual NPN Bipolar Digital Transistor (BRT)

Catalog

Dual NPN Bipolar Digital Transistor (BRT)

Part	Package / Case	Voltage - Collector Emitter Breakdown (Max) [Max]	Vce Saturation (Max) @ Ib, Ic	Current - Collector Cutoff (Max) [Max]	Transistor Type	DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	Mounting Type	Current - Collector (Ic) (Max) [Max]	Supplier Device Package	Resistor - Emitter Base (R2)	Resistor - Base (R1)	Power - Max [Max]
ON Semiconductor EMG2DXV5T5	SOT-553	50 V	250 mV	500 nA	2 NPN - Pre-Biased (Dual)	80	Surface Mount	100 mA	SOT-553	47000 Ohms	47 kOhms	230 mW
ON Semiconductor EMG2DXV5T1G	SOT-553	50 V	250 mV	500 nA	2 NPN - Pre-Biased (Dual)	80	Surface Mount	100 mA	SOT-553	47000 Ohms	47 kOhms	230 mW
ON Semiconductor EMG2DXV5T1	SOT-553	50 V	250 mV	500 nA	2 NPN - Pre-Biased (Dual)	80	Surface Mount	100 mA	SOT-553	47000 Ohms	47 kOhms	230 mW

Catalog

Dual NPN Bipolar Digital Transistor (BRT)

Key Features

• Simplifies Circuit Design

• Reduces Board Space

• Reduces Component Count

Description

The Dual NPN Bipolar Digital Transistor is designed to replace a single device and its external resistor bias network. The Dual PNP Bipolar Digital Transistor contains a single transistor with a monolithic bias network consisting of two resistors: a series base resistor and a base-emitter resistor. This eliminates these individual components by integrating them into a single device. This can reduce both system cost and board space. The device is housed in the SOT-553 package which is designed for low power surface mount applications.