Specification	VN2222LL-G-P013

Current - Continuous Drain (Id) @ 25°C	230 mA
Drain to Source Voltage (Vdss)	60 V
Drive Voltage (Max Rds On, Min Rds On) [Max]	10 V
Drive Voltage (Max Rds On, Min Rds On) [Min]	5 V
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds	60 pF
Mounting Type	Through Hole
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	TO-226-3, TO-92-3
Power Dissipation (Max)	400 mW, 1 W
Rds On (Max) @ Id, Vgs	7.5 Ohm
Supplier Device Package	TO-92-3
Technology	MOSFET (Metal Oxide)
Vgs (Max)	30 V
Vgs(th) (Max) @ Id [Max]	2.5 V

VN2222L Series

MOSFET, N-Channel Enhancement-Mode, 60V, 7.5 Ohm

Part	Package / Case	Current - Continuous Drain (Id) @ 25°C	Rds On (Max) @ Id, Vgs	Supplier Device Package	Operating Temperature [Min]	Operating Temperature [Max]	Input Capacitance (Ciss) (Max) @ Vds	Mounting Type	FET Type	Technology	Power Dissipation (Max)	Drain to Source Voltage (Vdss)	Drive Voltage (Max Rds On, Min Rds On) [Max]	Drive Voltage (Max Rds On, Min Rds On) [Min]	Vgs (Max)	Vgs(th) (Max) @ Id [Max]
Microchip Technology VN2222LL-G-P003	TO-226-3 TO-92-3	230 mA	7.5 Ohm	TO-92-3	-55 °C	150 °C	60 pF	Through Hole	N-Channel	MOSFET (Metal Oxide)	1 W 400 mW	60 V	10 V	5 V	30 V	2.5 V
Microchip Technology VN2222LL-G-P013	TO-226-3 TO-92-3	230 mA	7.5 Ohm	TO-92-3	-55 °C	150 °C	60 pF	Through Hole	N-Channel	MOSFET (Metal Oxide)	1 W 400 mW	60 V	10 V	5 V	30 V	2.5 V
Microchip Technology VN2222LL-G	TO-226-3 TO-92-3	230 mA	7.5 Ohm	TO-92-3	-55 °C	150 °C	60 pF	Through Hole	N-Channel	MOSFET (Metal Oxide)	1 W 400 mW	60 V	10 V	5 V	30 V	2.5 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Cut Tape (CT)	1	$ 0.64
		25	$ 0.54
		100	$ 0.49
	Tape & Box (TB)	2000	$ 0.49
Microchip Direct	AMMO	1	$ 0.64
		25	$ 0.54
		100	$ 0.49
		1000	$ 0.41
		5000	$ 0.37
		10000	$ 0.35

Description

General part information

VN2222L Series

This enhancement-mode (normally-off) transistor utilizes a vertical DMOS structure and silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and the high input impedance and positive temperature coefficient inherent in MOS devices. Characteristic of all MOS structures, this device is free from thermal runaway and thermally-induced secondary breakdown.