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1N5806TR
Discrete Semiconductor Products

JAN1N6620

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Microchip Technology

DIODE GEN PURP 220V 2A AXIAL

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1N5806TR
Discrete Semiconductor Products

JAN1N6620

Active
Microchip Technology

DIODE GEN PURP 220V 2A AXIAL

Deep-Dive with AI

DocumentsDatasheet

Technical Specifications

Parameters and characteristics for this part

SpecificationJAN1N6620
Capacitance @ Vr, F10 pF
Current - Average Rectified (Io)2 A
Current - Reverse Leakage @ Vr500 nA
GradeMilitary
Mounting TypeThrough Hole
Operating Temperature - Junction [Max]150 °C
Operating Temperature - Junction [Min]-65 C
Package / CaseA, Axial
QualificationMIL-PRF-19500/585
Reverse Recovery Time (trr)30 ns
Speed200 mA, 500 ns
Supplier Device PackageA, Axial
TechnologyStandard
Voltage - DC Reverse (Vr) (Max) [Max]220 V
Voltage - Forward (Vf) (Max) @ If1.6 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyBulk 111$ 6.12
Microchip DirectN/A 1$ 6.59

Description

General part information

JAN1N6620US-Rectifier Series

This "Ultrafast Recovery" rectifier diode series is military qualified to MIL-PRF19500/585 and is ideal for high-reliability applications where a failure cannot be tolerated. These industry-recognized 1.5 to 2.0 Amp rated rectifiers for working peak reverse voltages from 200 to 1000 volts are hermetically sealed with voidlessglass construction using an internal "Category I" metallurgical bond. These devices are also available in surface mount MELF package configurations by adding a "US" suffix (see separate data sheet for 1N6620US thru 1N6625US). Microchip also offers numerous other rectifier products to meet higher and lower current ratings with various recovery time speed requirements including standard, fast and ultrafast device types in both through-hole and surface mount packages.

Documents

Technical documentation and resources